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| T630W 6 A SnubberlessTM Triac Features A2 IT(RMS) = 6 A VDRM = VRRM = 600 and 800 V G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T630W is especially suited for high inductance loads. This device complies with UL standards (Ref. E81734). A1 A2 G ISOWATT220AB (Plastic) Table 1. Symbol IT(RMS) Device summary Value 6 600 and 800 30 Unit A V mA VDRM/VRRM IGT February 2010 Doc ID 3764 Rev 3 1/8 www.st.com 8 Characteristics T630W 1 Characteristics Table 2. Symbol IT(RMS) ITSM It dI/dt IGM PG(AV) Tstg Tj Absolute ratings (limiting values) Parameter On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range F = 50 Hz F = 60 Hz tp = 10 ms F = 120 Hz tp = 20 s Tj = 125C Tj = 125C Tc = 105C t = 20 ms t = 16.7 ms Value 6 80 A 84 36 50 4 1 - 40 to + 150 - 40 to + 125 As A/s A W C Unit A Table 3. Symbol IGT (1) VGT VGD IH (2) IL dV/dt (2) Electrical characteristics (Tj = 25 C, unless otherwise specified) Test conditions VD = 12 V RL = 30 VD = VDRM RL = 3.3 k IT = 100 mA I - III IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125 C Tj = 125 C Max. II Min. Min. 80 500 4.5 V/s A/ms Tj = 125 C Quadrant I - II - III I - II - III I - II - III Max. Max. Min. Max. Value 30 1.3 0.2 50 70 mA Unit mA V V mA (dI/dt)c (2) Without snubber 1. Minimum IGT is guaranted at 5% of IGT max. 2. For both polarities of A2 referenced to A1 Table 4. Symbol VT (1) Vt0 (1) Rd (1) IDRM IRRM Static characteristics Test conditions ITM = 8.5 A tp = 380 s Tj = 25 C Tj = 125 C Tj = 125 C Tj = 25 C Tj = 125 C Max. Max. Max. Max. 1 mA Value 1.4 0.85 50 5 Unit V V m A Threshold voltage Dynamic resistance VDRM = VRRM 1. For both polarities of A2 referenced to A1 2/8 Doc ID 3764 Rev 3 T630W Table 5. Symbol Rth(j-c) Rth(j-a) Characteristics Thermal resistance Parameter Junction to case (AC) (360 conduction angle) Junction to ambient Value 3.4 50 Unit C/W C/W Figure 1. P(W) 7 =180 Maximum power dissipation versus Figure 2. rms on-state current IT(RMS)(A) 7 On-state rms current versus case temperature =180 6 5 4 3 2 1 6 5 4 3 2 1 180 IT(RMS)(A) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 0 25 50 TC(C) 75 100 125 Figure 3. Relative variation of thermal impedance versus pulse duration Figure 4. ITM(A) 100 Tj max. Vt0 = 0.85V Rd = 50 m On-state characteristics (maximum values) K=[Zth/Rth] 1.E+00 Zth(j-c) Zth(j-a) 1.E-01 Tj = Tj max. 10 1.E-02 Tj = 25C tp(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 0 1 2 VTM(V) 3 4 5 6 Figure 5. ITSM(A) 90 80 70 60 50 40 30 20 10 0 1 Surge peak on-state current versus Figure 6. number of cycles 2 Non-repetitive surge peak on-state current for a sinusoidal 2 ITSM(A), I t (A s) 1000 Tj initial=25C t=20ms One cycle Non repetitive Tj initial=25C dI/dt limitation: 50A/s ITSM 100 Repetitive TC=105C I2t Pulse with width tp < 10 ms and corresponding value of I t 2 Number of cycles 10 10 100 1000 0.01 0.10 1.00 tp(ms) 10.00 Doc ID 3764 Rev 3 3/8 Characteristics T630W Figure 7. Relative variation of gate trigger current, holding current and latching Current versus junction temperature (typical values) Figure 8. Relative variation of critical rate of decrease of main current versus reapplied (dV/dt)c (typical value) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25C] 3.0 2.0 1.8 1.6 1.4 1.2 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 2.0 IGT 1.5 1.0 0.8 1.0 IH & IL 0.6 0.4 0.5 Tj(C) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.2 0.0 0.1 1.0 (dV/dt) (V/s) 10.0 100.0 Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj = 125C] 8 7 6 5 4 3 2 1 Tj(C) 0 0 25 50 75 100 125 4/8 Doc ID 3764 Rev 3 T630W Ordering information scheme 2 Ordering information scheme Figure 10. Ordering information scheme T 6 30 x00 W Triac series Current 6 = 6A Sensitivity 30 = 30mA Voltage 600 = 600V 800 = 800V Package W = ISOWATT220AB Doc ID 3764 Rev 3 5/8 Package information T630W 3 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. ISOWATT220AB dimensions Dimensions Ref. Millimeters Min. A H B Inches Min. 0.173 0.098 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.394 Max. 0.181 0.106 0.108 0.028 0.039 0.067 0.067 0.205 0.106 0.409 Max. 4.60 2.70 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 A B D 4.40 2.50 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 Dia L6 L2 L3 F2 F1 L4 D L7 E F F1 F2 G G1 H F G1 E L2 L3 16.00 typ. 28.60 9.80 15.90 9.00 3.00 30.60 10.60 16.40 9.30 3.20 0.630 typ. 1.125 0.386 0.626 0.354 0.118 1.205 0.417 0.646 0.366 0.126 G L4 L6 L7 Diam 6/8 Doc ID 3764 Rev 3 T630W Ordering information 4 Ordering information Table 7. Ordering information Marking T630600W ISOWATT220AB T630-800W T630800W 2.3 g 50 Tube Package Weight Base qty Delivery mode Order code T630-600W 5 Revision history Table 8. Date March-2004 09-Feb-2010 Document revision history Revision 2 3 Last release. Document split into T620W and T630W. This document provides information for the T630W. Changes Doc ID 3764 Rev 3 7/8 T630W Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 3764 Rev 3 |
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